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| MWI 35-12 A5 IGBT Modules Sixpack IC25 = 45 A = 1200 V VCES VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA W1 I 10 K10 A10 B10 R10 S10 F3 K3 P3 E10 F10 A1 M10 N10 V10 W10 E 72873 Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 k Continuous Transient TC = 25C TC = 80C TC = 80C, tP = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 39 , non repetitive VGE = 15 V, TJ = 125C, RG = 39 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 1200 1200 20 30 45 30 60 10 ICM = 60 VCEK < VCES 200 150 -40 ... +150 V V V V A A A s A W C C V~ V~ Nm lb.in. mm mm m/s2 g oz. Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q q Advantages q q q space and weight savings reduced protection circuits package designed for wave soldering 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Insulating material: Al2O3 Mounting torque (M5) Creepage distance on surface Strike distance through air Max. allowable acceleration Typical 4000 4800 2.0 - 2.5 18 - 22 9 9 50 80 2.8 Typical Applications q q q Md dS dA a Weight AC motor control AC servo and robot drives power supplies Data according to a single IGBT/FRED unless otherwise stated. (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 35-12 A5 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 2 6.5 V V Dimensions in mm (1 mm = 0.0394") V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS VGE = 0 V IC = 1 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 25 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 1.2 mA mA 200 nA V pF pF pF ns ns ns ns mJ mJ 0.6 K/W K/W 2.2 1650 250 110 100 2.7 Inductive load, TJ = 125C IC = 25 A, VGE = 15 V VCE = 600 V, RG = 39 70 500 70 3.8 2.8 with heatsink compound 1.2 Reverse Diode (FRED) Characteristic Values min. typ. 2.4 1.9 max. 2.6 2.3 50 30 20 200 2.6 V V A A A ns 1.3 K/W K/W Equivalent Circuits for Simulation Conduction VF IF IRM trr RthJC RthJS IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 25 A, VGE = 0 V, -diF/dt = 400 A/s TJ = 125C, VR = 600 V with heatsink compound IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.5 V; R0 = 40.7 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 24.9 m Thermal Response IGBT (typ.) Cth1 = 0.07 J/K; Rth1 = 0.586 K/W Cth2 = 0.18 J/K; Rth2 = 0.014 K/W Free Wheeling Diode (typ.) Cth1 = 0.05 J/K; Rth1 = 1.313 K/W Cth2 = 0.09 J/K; Rth2 = 0.025 K/W (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 35-12 A5 60 TJ = 25C VGE=17V 15V 13V 11V 60 TJ = 125C VGE=17V 15V 13V A 50 IC A 50 IC 40 40 30 20 9V 11V 30 20 10 0 0.0 9V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 60 A 50 IC VCE = 20V TJ = 25C 80 A 70 IF 60 50 40 30 20 TJ = 25C TJ = 125C 40 30 20 10 0 5 6 7 8 9 10 VGE 10 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 60 A IRM trr 20 V VCE = 600V IC = 25A 300 ns trr VGE 15 40 200 10 20 5 IRM TJ = 125C VR = 600V IF = 25A 100 35-12 0 0 20 40 60 80 100 120 140 nC QG 0 0 200 400 600 800 A/s -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 MWI 35-12 A5 14 12 mJ Eon 10 140 120 ns 100 td(on) tr Eon 80 VCE = 600V VGE = 15V RG = 47 TJ = 125C 6 mJ 5 t Eoff Eoff td(off) 600 ns 500 400 t VCE = 600V VGE = 15V RG = 47 TJ = 125C 4 3 8 6 4 2 0 0 300 200 100 0 60 40 20 0 2 1 0 0 10 20 30 40 IC tf 50 A 10 20 30 IC 40 50 A Fig. 7 Typ. turn on energy and switching times versus collector current 12 240 td(on) Eon tr ns 180 t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 5 mJ 1500 VCE = 600V VGE = 15V IC = 35A TJ = 125C mJ V = 15V GE 10 Eon VCE = 600V 8 6 4 IC = 35A TJ = 125C 4 3 td(off) Eoff ns 1200 t 900 600 300 0 200 240 tf 120 2 60 2 0 0 40 80 120 160 RG 0 200 240 1 0 0 40 80 120 160 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 70 A 60 ICM 50 10 K/W 1 ZthJC RG = 47 TJ = 125C VCEK < VCES 40 30 20 10 0 0 200 400 0.1 0.01 0.001 diode IGBT single pulse 35-12 600 800 1000 1200 V VCE 0.0001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 842 |
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